Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor - id: 6493366









A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a second Group III-V semiconductor material layer; a second contact; and a second Distributed Bragg Reflector mirror that is identical to the first Distributed Bragg Reflector mirror.Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor649336610/12/200202/05/20002002952Johnson; Frederick G.Koley; BikashWasiczko; Linda M.US Patent and Trademark OfficeGoogle Patent Searchpatentimages.storage.googleapis.com/US6493366B1/US06493366-20021210-D00000.pngUnique